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H7B0内部flash操作会出现死机的情况？？？？？？？？
//读取指定地址的字(32位数据)
//faddr:读地址
//返回值:对应数据.
uint32_t STMFLASH_ReadWord(uint32_t faddr)
{
return *(__IO uint32_t *)faddr;
}
//获取某个地址所在的flash扇区,仅用于BANK1！！
//addr:flash地址
//返回值:0~11,即addr所在的扇区
uint16_t STMFLASH_GetFlashSector(uint32_t addr)
{
if(addr<ADDR_FLASH_SECTOR_1_BANK1)return FLASH_SECTOR_0;
else if(addr<ADDR_FLASH_SECTOR_2_BANK1)return FLASH_SECTOR_1;
else if(addr<ADDR_FLASH_SECTOR_3_BANK1)return FLASH_SECTOR_2;
else if(addr<ADDR_FLASH_SECTOR_4_BANK1)return FLASH_SECTOR_3;
else if(addr<ADDR_FLASH_SECTOR_5_BANK1)return FLASH_SECTOR_4;
else if(addr<ADDR_FLASH_SECTOR_6_BANK1)return FLASH_SECTOR_5;
else if(addr<ADDR_FLASH_SECTOR_7_BANK1)return FLASH_SECTOR_6;
else if(addr<ADDR_FLASH_SECTOR_8_BANK1)return FLASH_SECTOR_7;
else if(addr<ADDR_FLASH_SECTOR_9_BANK1)return FLASH_SECTOR_8;
else if(addr<ADDR_FLASH_SECTOR_10_BANK1)return FLASH_SECTOR_9;
else if(addr<ADDR_FLASH_SECTOR_11_BANK1)return FLASH_SECTOR_10;
else if(addr<ADDR_FLASH_SECTOR_12_BANK1)return FLASH_SECTOR_11;
else if(addr<ADDR_FLASH_SECTOR_13_BANK1)return FLASH_SECTOR_12;
else if(addr<ADDR_FLASH_SECTOR_14_BANK1)return FLASH_SECTOR_13;
else if(addr<ADDR_FLASH_SECTOR_15_BANK1)return FLASH_SECTOR_14;
return FLASH_SECTOR_15;
}
/** ****************************************************************************
* @remarks
* @brief
* @param[in]
* @param[out]
* @return
* @attention
//从指定地址开始写入指定长度的数据
//特别注意:因为STM32H7的扇区实在太大,没办法本地保存扇区数据,所以本函数
// 写地址如果非0XFF,那么会先擦除整个扇区且不保存扇区数据.所以
// 写非0XFF的地址,将导致整个扇区数据丢失.建议写之前确保扇区里
// 没有重要数据,最好是整个扇区先擦除了,然后慢慢往后写.
//该函数对OTP区域也有效!可以用来写OTP区!
//OTP区域地址范围:0X1FF0F000~0X1FF0F41F
//WriteAddr:起始地址(此地址必须为4的倍数!!)FLASH_TYPEPROGRAM_FLASHWORD
//pBuffer:数据指针
//NumToWrite:字(32位)数(就是要写入的32位数据的个数.)
*******************************************************************************/
uint32_t write_fmc_flash(uint32_t WriteAddr,uint32_t *pBuffer,uint32_t NumToWrite)
{
FLASH_EraseInitTypeDef FlashEraseInit;
HAL_StatusTypeDef FlashStatus=HAL_OK;
uint32_t SectorError=0;
uint32_t addrx=0;
uint32_t endaddr=0;
if(WriteAddr<STM32_FLASH_BASE||WriteAddr%4)return 1; //非法地址
HAL_FLASH_Unlock(); //解锁
addrx=WriteAddr; //写入的起始地址
endaddr=WriteAddr+NumToWrite*4; //写入的结束地址
if(addrx<0X1FF00000)
{
while(addrx<endaddr) //扫清一切障碍.(对非FFFFFFFF的地方,先擦除)
{
if(STMFLASH_ReadWord(addrx)!=0XFFFFFFFF)//有非0XFFFFFFFF的地方,要擦除这个扇区
{
FlashEraseInit.TypeErase=FLASH_TYPEERASE_SECTORS; //擦除类型，扇区擦除
FlashEraseInit.Sector=STMFLASH_GetFlashSector(addrx); //要擦除的扇区
FlashEraseInit.Banks=FLASH_BANK_1; //操作BANK1
FlashEraseInit.NbSectors=1; //一次只擦除一个扇区
//FlashEraseInit.VoltageRange=VOLTAGE_RANGE_3; //电压范围，VCC=2.7~3.6V之间!!
if(HAL_FLASHEx_Erase(&FlashEraseInit,&SectorError)!=HAL_OK)
{
break;//发生错误了
}
SCB_CleanInvalidateDCache(); //清除无效的D-Cache
}else addrx+=4;
FLASH_WaitForLastOperation(FLASH_WAITETIME,FLASH_BANK_1); //等待上次操作完成
}
}
FlashStatus=FLASH_WaitForLastOperation(FLASH_WAITETIME,FLASH_BANK_1); //等待上次操作完成
if(FlashStatus==HAL_OK)
{
while(WriteAddr<endaddr)//写数据
{
if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD,WriteAddr,(uint32_t)pBuffer)!=HAL_OK)//写入数据
{
break; //写入异常
}
WriteAddr+=16; //
pBuffer+=4; //
}
}
HAL_FLASH_Lock(); //上锁
return 0;
}
/** ****************************************************************************
* @remarks
* @brief
* @param[in]
* @param[out]
* @return
* @attention
*******************************************************************************/
uint32_t read_fmc_flash(uint32_t ReadAddr,uint32_t *pBuffer,uint32_t NumToRead)
{
uint32_t i;
for(i=0;i<NumToRead;i++)
{
pBuffer=STMFLASH_ReadWord(ReadAddr);//读取4个字节.
ReadAddr+=4;//偏移4个字节.
}
return 0;
}
#define ADDR_FLASH_SECTOR_0_BANK1 ((uint32_t)0x08000000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_1_BANK1 ((uint32_t)0x08002000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_2_BANK1 ((uint32_t)0x08004000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_3_BANK1 ((uint32_t)0x08006000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_4_BANK1 ((uint32_t)0x08008000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_5_BANK1 ((uint32_t)0x0800A000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_6_BANK1 ((uint32_t)0x0800C000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_7_BANK1 ((uint32_t)0x0800E000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_8_BANK1 ((uint32_t)0x08010000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_9_BANK1 ((uint32_t)0x08012000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_10_BANK1 ((uint32_t)0x08014000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_11_BANK1 ((uint32_t)0x08016000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_12_BANK1 ((uint32_t)0x08018000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_13_BANK1 ((uint32_t)0x0801A000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_14_BANK1 ((uint32_t)0x0801C000) //扇区0起始地址, 8 Kbytes
#define ADDR_FLASH_SECTOR_15_BANK1 ((uint32_t)0x0801E000) //扇区0起始地址, 8 Kbytes
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发表于 2023-3-23 13:54:00
发表于 2023-3-24 10:15:08
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