EV24C512A 512Kbit Serial I2C Page EEPROM Review

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EV24C512A 512Kbit Serial I2C Page EEPROM ReviewIntroductionThe EVASH Technology EV24C512A is a high-density, low-power 512Kbit EEPROM, organized as 65,536 words of 8 bits each. Designed for industrial and commercial applications, it offers advanced features including an I2C interface, robust memory architecture, high-speed performance, and exceptional reliability.
Features and Specifications

• Memory Capacity: 512 Kbits (64 Kbytes)
• Page Size: 128 bytes
• I2C Compatibility: Fully compliant with all I2C bidirectional data transfer protocols
• Speed: Operates up to 1 MHz
• Read Modes: Supports random and sequential reads
• Write Capabilities:
  
  • Byte write time: 3 ms
  • Page write time: 3 ms
  • Supports partial page writes
    
• Data Protection: Equipped with a write protect pin for enhanced data security
• Noise Immunity: Schmitt Trigger inputs and input filtering
• Endurance: Rated at 4 million write cycles
• Data Retention: 200 years
• ESD Protection: Withstands ESD up to 8000V HBM
• Package: Available in an 8-lead UDFN package
  

Pin Configuration and Functional DescriptionThe EV24C512A EEPROM features several key pins:

• A0-A2: Address inputs, allowing up to 8 devices on a single I2C bus
• SDA: Serial Data (bi-directional)
• SCL: Serial Clock Input
• WP: Write Protect
• GND: Ground
• Vcc: Power Supply
  

Device Operation

• Start/Stop Conditions: Initiated by high-to-low and low-to-high transitions of SDA with SCL high, respectively.
• Acknowledgment: The EEPROM sends a "0" to acknowledge receipt of each byte.
• Standby Mode: Enabled upon power-up and after receipt of the STOP bit.
  

Memory Organization

• The memory is organized with 512 pages of 128 bytes each.
• Requires a 16-bit data word address for random word addressing.
  

Write Operations

• Byte Write: Two 8-bit data word addresses followed by the data word, ending with a STOP condition to initiate the write cycle.
• Page Write: Allows up to 128 bytes to be written in one operation, with the address incrementing internally.
  

Read Operations

• Current Address Read: Reads the byte at the current address.
• Random Read: Requires a dummy byte write sequence to set the address before reading.
• Sequential Read: Reads consecutive bytes, automatically incrementing the address.
  

Identification Page

• An additional 128-byte page can be written and locked in read-only mode for storing sensitive data.
  

Electrical Characteristics

• Supply Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C (standard), up to +125°C (extended versions)
• Current Consumption:
  
  • Read: 0.14 mA at 400 kHz
  • Write: 0.28 mA at 400 kHz
  • Standby: 0.03 μA
    
• Input/Output Capacitance:
  
  • SDA: 8 pF
  • A0, A1, A2, SCL: 6 pF
    

Reliability and Durability

• Endurance: 4 million write cycles
• Data Retention: 200 years
• ESD Protection: 8000V HBM
  

Package Information

• UDFN Package: Ultra-compact design suitable for space-constrained applications.
  

ConclusionThe EVASH EV24C512A EEPROM is an outstanding choice for applications requiring high memory density, low power consumption, and robust data protection. Its advanced features, such as high-speed I2C compatibility, extensive endurance, and enhanced noise immunity, make it a reliable component for both industrial and commercial uses. The additional Identification Page adds a layer of security, making it suitable for storing sensitive parameters. Overall, the EV24C512A stands out as a versatile and durable memory solution.

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