STM32G0B1CB使用片内flash，擦除失败

xiaolun217001

STM32G0B1CB使用片内flash，擦除失败，HAL_FLASHEx_Erase返回错误码HAL_ERROR，


    /* Unlock the Flash to enable the flash control register access *************/
    HAL_FLASH_Unlock();
    //__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPERR);

    /* Get the 1st page to erase */
    FirstPage = GetPage(FLASH_USER_START_ADDR);

    /* Get the number of pages to erase from 1st page */
    NbOfPages = GetPage(FLASH_USER_END_ADDR) - FirstPage + 1;

    /* Fill EraseInit structure*/
    EraseInitStruct.TypeErase   = FLASH_TYPEERASE_PAGES;
    EraseInitStruct.Page        = FirstPage;
    EraseInitStruct.NbPages     = NbOfPages;

    errcode = HAL_FLASHEx_Erase(&EraseInitStruct, &PageError);
    if (errcode != HAL_OK)
    {
        return ;
    }

    Address = FLASH_USER_START_ADDR;

    while (Address < FLASH_USER_END_ADDR)
    {
        if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, Address, DATA_64) == HAL_OK)
        {
            Address = Address + 8;
        }
        else
        {
            PageError = 0xEEEEEEEEU;
        }
    }

    /* Lock the Flash to disable the flash control register access (recommended
     to protect the FLASH memory against possible unwanted operation) *********/
    HAL_FLASH_Lock();

skyshine

这一句为啥注释掉：__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPERR);
在擦除函数之前加这个试试，这个是hal库里扒的

void WaitForLastOperation(void)
{
   while ((FLASH->SR & FLASH_SR_BSY1))
   {
   }
   FLASH->SR = FLASH_SR_CLEAR;
   while ((FLASH->SR & FLASH_SR_CFGBSY) != 0x00U)
   {
   }
}

skyshine

取消注释清标志的那句，还有检查擦除页大小

xiaolun217001

取消注释清标志，擦除页也没有错，问题依旧，错误码是0xA0;

xiaolun217001

这个函数入口增加如下语句有效，这样做可能存在风险。
  /* Clear SR register */
  FLASH->SR = FLASH_SR_CLEAR;

2360985396

我也遇到了 我感觉是g0的bug 其他的芯片都没事

ilcvm

可以参考一下的STM32Cube_FW_G0_V1.6.1\Projects\NUCLEO-G0B1RE\Examples\FLASH\FLASH_EraseProgram\Src\main.c，按这个流程做IAP或保存参数没发现过问题。

  /* Unlock the Flash to enable the flash control register access *************/
  HAL_FLASH_Unlock();

/* Clear OPTVERR bit set on virgin samples */
  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);

  /* Erase the user Flash area
    (area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR) ***********/

  /* Get the 1st page to erase */
  FirstPage = GetPage(FLASH_USER_START_ADDR);

  /* Get the number of pages to erase from 1st page */
  NbOfPages = GetPage(FLASH_USER_END_ADDR) - FirstPage + 1;

  /* Get the bank */
  BankNumber = GetBank(FLASH_USER_START_ADDR);

  /* Fill EraseInit structure*/
  EraseInitStruct.TypeErase   = FLASH_TYPEERASE_PAGES;
  EraseInitStruct.Banks       = BankNumber;
  EraseInitStruct.Page        = FirstPage;
  EraseInitStruct.NbPages     = NbOfPages;

  /* Note: If an erase operation in Flash memory also concerns data in the data or instruction cache,
     you have to make sure that these data are rewritten before they are accessed during code
     execution. If this cannot be done safely, it is recommended to flush the caches by setting the
     DCRST and ICRST bits in the FLASH_CR register. */