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现在的sram，用的em681fv16bu-55，但是发现数据不正常
存0-206的数据读出来是这样的
9 10 11 12 13 14 15 8 9 10 11 12 13 14 15 24 25 26 27 28 29 30 31 24 25 26 27 28 29 30 31 40 41 42 43 44 45 46 47 40 41 42 43 44 45 46 47 56 57 58 59 60 61 62 63 56 57 58 59 60 61 62 63 72 73 74 75 76 77 78 79 72 73 74 75 76 77 78 79 88 89 90 91 92 93 94 95 88 89 90 91 92 93 94 95 104 105 106 107 108 109 110 111 104 105 106 107 108 109 110 111 120 121 122 123 124 125 126 127 120 121 122 123 124 125 126 127 136 137 138 139 140 141 142 143 136 137 138 139 140 141 142 143 152 153 154 155 156 157 158 159 152 153 154 155 156 157 158 159 168 169 170 171 172 173 174 175 168 169 170 171 172 173 174 175 184 185 186 187 188 189 190 191 184 185 186 187 188 189 190 191 200 201 202 203 204 205 206
前面的8位数据把后面的覆盖了，然后重复前面的八位数据，请帮忙啊，谢谢。
驱动代码：
FSMC_NORSRAMInitTypeDef FSMC_NORSRAMInitStructure;
FSMC_NORSRAMTimingInitTypeDef readWriteTiming;
GPIO_InitTypeDef GPIO_InitStructure;
RCC_APB2PeriphClockCmd(RCC_APB2Periph_GPIOD|RCC_APB2Periph_GPIOE|RCC_APB2Periph_GPIOF|RCC_APB2Periph_GPIOG,ENABLE);
RCC_AHBPeriphClockCmd(RCC_AHBPeriph_FSMC,ENABLE);
GPIO_InitStructure.GPIO_Pin = 0xFF33; //PORTD复用推挽输出
GPIO_InitStructure.GPIO_Mode = GPIO_Mode_AF_PP; //复用推挽输出
GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;
GPIO_Init(GPIOD, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0xFF83; //PORTE复用推挽输出
GPIO_Init(GPIOE, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0xF03F; //PORTD复用推挽输出
GPIO_Init(GPIOF, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0x043F; //PORTD复用推挽输出
GPIO_Init(GPIOG, &GPIO_InitStructure);
readWriteTiming.FSMC_AddressSetupTime = 0x00; //地址建立时间（ADDSET）为1个HCLK 1/36M=27ns
readWriteTiming.FSMC_AddressHoldTime = 0x00; //地址保持时间（ADDHLD）模式A未用到
readWriteTiming.FSMC_DataSetupTime = 0x04; //数据保持时间（DATAST）为3个HCLK 4/72M=55ns(对EM的SRAM芯片)
readWriteTiming.FSMC_BusTurnAroundDuration = 0x00;
readWriteTiming.FSMC_CLKDivision = 0x00;
readWriteTiming.FSMC_DataLatency = 0x00;
readWriteTiming.FSMC_AccessMode = FSMC_AccessMode_A; //模式A
FSMC_NORSRAMInitStructure.FSMC_Bank = FSMC_Bank1_NORSRAM3;// 这里我们使用NE3 ，也就对应BTCR[4],[5]。
FSMC_NORSRAMInitStructure.FSMC_DataAddressMux = FSMC_DataAddressMux_Disable; //0 1
FSMC_NORSRAMInitStructure.FSMC_MemoryType =FSMC_MemoryType_SRAM;// FSMC_MemoryType_SRAM; //SRAM //0 2 3
FSMC_NORSRAMInitStructure.FSMC_MemoryDataWidth = FSMC_MemoryDataWidth_16b;//存储器数据宽度为16bit
FSMC_NORSRAMInitStructure.FSMC_BurstAccessMode =FSMC_BurstAccessMode_Disable;// FSMC_BurstAccessMode_Disable; //0 8
FSMC_NORSRAMInitStructure.FSMC_WaitSignalPolarity = FSMC_WaitSignalPolarity_Low; // 0 9
FSMC_NORSRAMInitStructure.FSMC_AsynchronousWait=FSMC_AsynchronousWait_Disable;
FSMC_NORSRAMInitStructure.FSMC_WrapMode = FSMC_WrapMode_Disable; // 0 10
FSMC_NORSRAMInitStructure.FSMC_WaitSignalActive = FSMC_WaitSignalActive_BeforeWaitState; //0 11
FSMC_NORSRAMInitStructure.FSMC_WriteOperation = FSMC_WriteOperation_Enable; //存储器写使能 //1 12
FSMC_NORSRAMInitStructure.FSMC_WaitSignal = FSMC_WaitSignal_Disable; //0 13
FSMC_NORSRAMInitStructure.FSMC_ExtendedMode = FSMC_ExtendedMode_Disable; // 读写使用相同的时序
FSMC_NORSRAMInitStructure.FSMC_WriteBurst = FSMC_WriteBurst_Disable; //0 15
FSMC_NORSRAMInitStructure.FSMC_ReadWriteTimingStruct = &readWriteTiming;
FSMC_NORSRAMInitStructure.FSMC_WriteTimingStruct = &readWriteTiming; //读写同样时序
FSMC_NORSRAMInit(&FSMC_NORSRAMInitStructure); //初始化FSMC配置
FSMC_NORSRAMCmd(FSMC_Bank1_NORSRAM3, ENABLE); // 使能BANK3
求帮忙看看 |
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发表于 2015-4-23 13:07:51
发表于 2015-4-23 14:10:12
